Model:
NC2M120C20HTNG
Brand:
Description:
N-Channel 20V 126A 625W TO-247-4 Through Hole
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Technical Specifications
Package：Tube
Product Status：Active
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1.2 kV
Current - Continuous Drain (Id) @ 25°C：126A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：30mOhm @ 63A, 20V
Vgs(th) (Max) @ Id：4.5V @ 20mA
Gate Charge (Qg) (Max) @ Vgs：282 nC @ 20 V
Vgs (Max)：+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds：4615 pF @ 1 kV
FET Feature：-
Power Dissipation (Max)：625W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-4L
Package / Case：TO-247-4