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Model:
NC1M120C35HTNG
Brand:
Description:
N-Channel 18V 75A 386W TO-247-4 Through Hole
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NC1M120C35HTNG
📦 Stock: 768,276
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Technical Specifications

Package:Tube
Product Status:Active
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1.2 kV
Current - Continuous Drain (Id) @ 25°C:75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:50mOhm @ 33.3A, 18V
Vgs(th) (Max) @ Id:4.5V @ 15mA
Gate Charge (Qg) (Max) @ Vgs:190 nC @ 18 V
Vgs (Max):+18V, -5V
Input Capacitance (Ciss) (Max) @ Vds:2834 pF @ 1 kV
FET Feature:-
Power Dissipation (Max):386W (Ta)
Operating Temperature:-55°C ~ 175°C (TJ)
Grade:-
Qualification:-
Mounting Type:Through Hole
Supplier Device Package:TO-247-4L
Package / Case:TO-247-4

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