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Model:
JAN2N3636UB/TR
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Description:
Bipolar (BJT) Transistor PNP 175 V 1.5 W 4-SMD, No Lead Surface Mount
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JAN2N3636UB/TR
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Technical Specifications

Series-
PackageBulk
Product StatusActive
Transistor TypePNP
Current - Collector (Ic) (Max)10 µA
Voltage - Collector Emitter Breakdown (Max)175 V
Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 50mA
Current - Collector Cutoff (Max)10µA
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 50mA, 10V
Power - Max1.5 W
Frequency - Transition-
Operating Temperature-65°C ~ 200°C (TJ)
GradeMilitary
QualificationMIL-PRF-19500/357
Mounting TypeSurface Mount
Package / Case4-SMD, No Lead
Supplier Device PackageUB

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