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Technical Specifications
Package：Tube
Product Status：Active
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：100V
Current - Continuous Drain (Id) @ 25°C：100A
Rds On (Max) @ Id, Vgs：7.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id：4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：151nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：6900pF @ 25V
Power - Max：150W
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Package / Case：ISOPLUSi5-PAK™
Supplier Device Package：ISOPLUSi5-Pak™