Model:
IXFH20N100P
Brand:
Description:
N-Channel 1000 V 20A 660W TO-247-3 Through Hole
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Technical Specifications
Package：Tube
Product Status：Active
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：1000 V
Current - Continuous Drain (Id) @ 25°C：20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：570mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：126 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：7300 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：660W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247AD (IXFH)
Package / Case：TO-247-3