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Technical Specifications
Product Status：Active
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：200 V
Current - Continuous Drain (Id) @ 25°C：19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V, 4.5V
Rds On (Max) @ Id, Vgs：200mOhm @ 15A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：70 nC @ 10 V
Vgs (Max)：20V
Input Capacitance (Ciss) (Max) @ Vds：3400 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：138W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：-
Package / Case：-