Model:
GS65R038Q4
Brand:
Description:
N-Channel 650 V 60A 395W TO-247-4 Through Hole
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Technical Specifications
Series：-
Package：Tube
Product Status：Active
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：18V
Rds On (Max) @ Id, Vgs：49mOhm @ 30A, 18V
Vgs(th) (Max) @ Id：4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-10V, +20V
Input Capacitance (Ciss) (Max) @ Vds：1480 pF @ 1000 V
FET Feature：-
Power Dissipation (Max)：395W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-4L
Package / Case：TO-247-4