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Technical Specifications
Series:-
Package:Cut Tape (CT)
Product Status:Active
Technology:MOSFET (Metal Oxide)
Configuration:2 N-Channel
FET Feature:-
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:10A (Tc)
Rds On (Max) @ Id, Vgs:35mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:1330pF @ 30V
Power - Max:20W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Grade:-
Qualification:-
Mounting Type:Surface Mount
Package / Case:8-PowerVDFN
Supplier Device Package:8-DFN (3.15x3.05)
