Model:
G2K2P10D3E
Brand:
Description:
P-Channel 100 V 10A 31W 8-PowerVDFN Surface Mount
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Technical Specifications
Package：Cut Tape (CT)
Product Status：Active
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：210mOhm @ -6A, -10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：33 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1668 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：31W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-DFN (3.15x3.05)
Package / Case：8-PowerVDFN