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Technical Specifications
Series：-
Package：Cut Tape (CT)
Product Status：Active
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：20A (Tc)
Rds On (Max) @ Id, Vgs：21mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：2193pF @ 10V
Power - Max：15W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Package / Case：8-PowerVDFN
Supplier Device Package：8-DFN (3.15x3.05) Dual