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Technical Specifications
Series：-
Package：Bulk
Product Status：Active
Technology：Silicon Carbide (SiC)
Configuration：2 N-Channel (Dual), Schottky
FET Feature：-
Drain to Source Voltage (Vdss)：1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C：370A (Tc)
Rds On (Max) @ Id, Vgs：10mOhm @ 200A, 20V
Vgs(th) (Max) @ Id：3V @ 10mA
Gate Charge (Qg) (Max) @ Vgs：1360nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：2300W
Operating Temperature：-40°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Chassis Mount
Package / Case：SP6
Supplier Device Package：SP6