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Technical Specifications
Series：-
Package：Bulk
Product Status：Obsolete
Technology：Silicon Carbide (SiC)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C：26A (Tc)
Rds On (Max) @ Id, Vgs：98mOhm @ 20A, 20V
Vgs(th) (Max) @ Id：3V @ 5mA
Gate Charge (Qg) (Max) @ Vgs：62nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds：950pF @ 1000V
Power - Max：125W
Operating Temperature：-40°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Chassis Mount
Package / Case：SP3
Supplier Device Package：SP3