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Technical Specifications
Series:-
Package:Bulk
Product Status:Obsolete
Technology:MOSFET (Metal Oxide)
Configuration:2 N-Channel (Dual)
FET Feature:-
Drain to Source Voltage (Vdss):200V
Current - Continuous Drain (Id) @ 25°C:333A
Rds On (Max) @ Id, Vgs:5mOhm @ 166.5A, 10V
Vgs(th) (Max) @ Id:4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs:1184nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:40800pF @ 25V
Power - Max:1250W
Operating Temperature:-40°C ~ 150°C (TJ)
Grade:-
Qualification:-
Mounting Type:Chassis Mount
Package / Case:SP4
Supplier Device Package:SP4
