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Technical Specifications
Package：Bulk
Product Status：Obsolete
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual) Asymmetrical
FET Feature：-
Drain to Source Voltage (Vdss)：100V
Current - Continuous Drain (Id) @ 25°C：139A
Rds On (Max) @ Id, Vgs：10mOhm @ 69.5A, 10V
Vgs(th) (Max) @ Id：4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs：350nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：9875pF @ 25V
Power - Max：390W
Operating Temperature：-40°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Chassis Mount
Package / Case：SP3
Supplier Device Package：SP3