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Technical Specifications
Series：-
Package：Bulk
Product Status：Obsolete
Technology：MOSFET (Metal Oxide)
Configuration：4 N-Channel (Full Bridge)
FET Feature：-
Drain to Source Voltage (Vdss)：1000V (1kV)
Current - Continuous Drain (Id) @ 25°C：11A
Rds On (Max) @ Id, Vgs：960mOhm @ 9A, 10V
Vgs(th) (Max) @ Id：5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：150nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：3876pF @ 25V
Power - Max：208W
Operating Temperature：-40°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Chassis Mount
Package / Case：SP1
Supplier Device Package：SP1