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Technical Specifications
Series：-
Package：Bulk
Product Status：Obsolete
Technology：Silicon Carbide (SiC)
Configuration：2 N-Channel (Half Bridge)
FET Feature：-
Drain to Source Voltage (Vdss)：1000V (1kV)
Current - Continuous Drain (Id) @ 25°C：36A
Rds On (Max) @ Id, Vgs：270mOhm @ 18A, 10V
Vgs(th) (Max) @ Id：5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs：308nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：8700pF @ 25V
Power - Max：694W
Operating Temperature：-40°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Chassis Mount
Package / Case：SP4
Supplier Device Package：SP4