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Technical Specifications
Package：Tray
Product Status：Obsolete
Technology：MOSFET (Metal Oxide)
Configuration：6 N-Channel (3-Phase Bridge)
FET Feature：-
Drain to Source Voltage (Vdss)：900V
Current - Continuous Drain (Id) @ 25°C：59A
Rds On (Max) @ Id, Vgs：60mOhm @ 52A, 10V
Vgs(th) (Max) @ Id：3.5V @ 6mA
Gate Charge (Qg) (Max) @ Vgs：540nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：13600pF @ 100V
Power - Max：462W
Operating Temperature：-40°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Chassis Mount
Package / Case：SP6
Supplier Device Package：SP6-P