Model:
AOM015V65X2
Brand:
Description:
N-Channel 650 V 96A 312W TO-247-4 Through Hole
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Technical Specifications
Series：-
Package：Tube
Product Status：Active
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：96A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：22mOhm @ 24A, 15V
Vgs(th) (Max) @ Id：3.5V @ 24mA
Gate Charge (Qg) (Max) @ Vgs：152 nC @ 15 V
Vgs (Max)：+15V, -5V
Input Capacitance (Ciss) (Max) @ Vds：4880 pF @ 400 V
FET Feature：-
Power Dissipation (Max)：312W (Tj)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-4L
Package / Case：TO-247-4