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Model:
2N5015S
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Description:
Bipolar (BJT) Transistor NPN 1000 V 1 W TO-205AD, TO-39-3 Metal Can Through Hole
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2N5015S
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Technical Specifications

Series-
PackageBulk
Product StatusObsolete
Transistor TypeNPN
Current - Collector (Ic) (Max)200 mA
Voltage - Collector Emitter Breakdown (Max)1000 V
Vce Saturation (Max) @ Ib, Ic1.8V @ 5mA, 20mA
Current - Collector Cutoff (Max)10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 20mA, 10V
Power - Max1 W
Frequency - Transition-
Operating Temperature-65°C ~ 200°C (TJ)
GradeMilitary
QualificationMIL-PRF-19500/727
Mounting TypeThrough Hole
Package / CaseTO-205AD, TO-39-3 Metal Can
Supplier Device PackageTO-39 (TO-205AD)

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