Model:
2N1016B
Brand:
Description:
Bipolar (BJT) Transistor NPN 100 V 7.5 A 150 W -
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Technical Specifications
Series：-
Package：Bulk
Product Status：Active
Transistor Type：NPN
Current - Collector (Ic) (Max)：7.5 A
Voltage - Collector Emitter Breakdown (Max)：100 V
Vce Saturation (Max) @ Ib, Ic：2.5V @ 1A, 5A
Current - Collector Cutoff (Max)：1mA
DC Current Gain (hFE) (Min) @ Ic, Vce：20 @ 2A, 4V
Power - Max：150 W
Frequency - Transition：-
Operating Temperature：-65°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：-
Package / Case：-
Supplier Device Package：TO-82